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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV2044 UHF power transistor
Product specification Supersedes data of 1996 Feb 09 1996 Nov 14
Philips Semiconductors
Product specification
UHF power transistor
FEATURES * Emitter ballasting resistors for optimum temperature profile * Gold metallization ensures excellent reliability * Internal input and output matching to achieve high power gain and collector efficiency for an easy design of wideband circuits. APPLICATIONS * Common emitter class-AB operation in base station transmitters in the 1800 to 2000 MHz frequency range.
3
columns
BLV2044
PINNING - SOT437A PIN 1 2 3 SYMBOL c b e base emitter, connected to flange DESCRIPTION collector
1
c b e
2 Top view
MAM112
DESCRIPTION NPN silicon planar transistor in a 2-lead SOT437A flange package with a ceramic cap. The emitter is connected to the flange.
Fig.1 SOT437A.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common emitter test circuit. MODE OF OPERATION CW, class-AB CW, class-AB 2-tone, class-AB f (MHz) 1950 1990 f1 = 1950; f2 = 1950.1 VCE (V) 26 26 26 PL (W) 15 15 15 (PEP) Gp (dB) 8 8 typ. 8.5 C (%) 40 40 typ. 35 dim (dBc) - - typ. -30
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1996 Nov 14
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature operating junction temperature Tmb = 25 C CONDITIONS open emitter open base open collector - - - - - - -65 - MIN.
BLV2044
MAX. 60 28 2.5 3 3 57 +150 200 V V V A A
UNIT
W C C
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Ptot = 57 W; Tmb = 25 C VALUE 3.07 0.4 UNIT K/W K/W
handbook, halfpage
10
MGG283
handbook, halfpage
80
MGG284
Ptot (W) IC (A) (2) 1 40 (1) 60 (1) (2)
20
10-1
1
10
VCE (V)
102
0 0 40 80 120 Th (C) 160
(1) Tmb =25 C. (2) Th = 70 C.
(1) Continuous operation. (2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
1996 Nov 14
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Cre Note 1. Capacitance of die only. PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC = 20 mA open base; IC = 10 mA open collector; IE = 0.5 mA VCE = 12.5 V; VBE = 0 VCE = 26 V; IC = 1 A VCB = 26 V; IE = ie = 0; f = 1 MHz; note 1 VCE = 26 V; IC = 0; f = 1 MHz MIN. 60 28 2.5 - 45 - - TYP. - - - - 100 16 8
BLV2044
MAX. UNIT - - - 4 120 - - pF pF V V V mA
handbook, halfpage
120
MGG285
handbook, halfpage
30
MGG286
(1) hFE (2) 80 20 Cre (pF)
40
10
0 0 1 2 3 4 IC (A) 5
0 0 10 20 30 VCE (V) 40
(1) VCE = 26 V; tp = 500 s; = < 1 %. (2) VCE = 10 V.
f = 1 MHz.
Fig.4
DC current gain as a function of collector current; typical values.
Fig.5
Feedback capacitance as a function of collector-emitter voltage; typical values.
1996 Nov 14
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION RF performance at Th = 25 C in a common emitter test circuit. MODE OF OPERATION CW, class-AB CW, class-AB (note 1) 2-tone, class-AB Note 1. See application note BLV2044. Ruggedness in class-AB operation f (MHz) 1950 1990 f1 = 1950, f2 = 1950.1 VCE (V) 26 26 26 ICQ (mA) 40 40 40 PL (W) 15 15 15 (PEP) Gp (dB) 8 typ. 8.5 8 typ. 8.5
BLV2044
C (%) 40 typ. 45 40 typ. 35
dim (dBc) - - typ. -30
The BLV2044 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: f = 1950 MHz; VCE = 26 V; ICQ = 40 mA; PL = 15 W; Tmb = 25 C.
handbook, halfpage
12
MGG287
60 C (%) 40
handbook, halfpage
24
MGG288
GP (dB) 8
GP C
PL (W) 16
4
20
8
0 0 8 16 PL (W)
0 24
0 0 1 2 3 4 PD (W) 5
VCE = 26 V; ICQ = 40 mA; f = 1950 MHz.
VCE = 26 V; ICQ = 40 mA; f = 1950 MHz.
Fig.6
Power gain and collector efficiency as functions of load power; typical values.
Fig.7
Load power as a function of drive power; typical values.
1996 Nov 14
5
Philips Semiconductors
Product specification
UHF power transistor
BLV2044
handbook, halfpage
12
MGG289
MGD245
handbook, halfpage
0
GP (dB) (1) 8 (2)
dim (dBc) -20
d3 (3) 4 -40 d5 d7
0 10-3
10-2
10-1
1
PD (W)
10
-60 0 5 10 15 20 25 PL (PEP) (W)
VCE = 26 V; f = 1950 MHz. (1) ICQ = 120 mA. (2) ICQ = 80 mA.
(3) ICQ = 40 mA.
VCE = 26 V; ICQ = 40 mA; f1 = 1950 MHz; f2 = 1950.1 MHz.
Fig.8
Power gain as a function of drive power; typical values.
Fig.9
Intermodulation distortion as a function of peak envelope load power; typical values.
MGD244
handbook, halfpage
0
d3 (dBc) -20
(1) (2) (3)
-40
-60 0 5 10 15 20 25 PL (PEP) (W)
VCE = 26 V; f1 = 1950 MHz; f2 = 1950.1 MHz. (1) ICQ = 20 mA. (2) ICQ = 40 mA. (3) ICQ = 60 mA.
Fig.10 Third order intermodulation distortion as a function of peak envelope load power; typical values.
1996 Nov 14
6
Philips Semiconductors
Product specification
UHF power transistor
Test circuit information
BLV2044
R1
handbook, full pagewidth
+Vbias C2
L5 C3
C5
C7 L10 C8 +VCC
L4 L6 L3 50 input C1 L1 L2 DUT
L9
L7
L8
C9
50 output
C6 C4
MGG290
Fig.11 Class-AB test circuit for 1.8 to 2 GHz.
List of components (see Figs 11 and 12) COMPONENT C1, C9 C2 C3 C4 C5, C7 C6 C8 L1 L2 L3 L4 L5, L10 L6 L7 DESCRIPTION multilayer ceramic chip capacitor; note 1 tantalum SMD capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor stripline; note 3 stripline; note 3 stripline; note 3 5 turns enamelled 1 mm copper wire grade 4S2 ferroxcube chip-bead stripline; note 3 stripline; note 3 12 40 length 5 mm width 7 mm length 6.7 mm width 1.4 mm VALUE 30 pF 10 F; 35 V 22 nF 1.1 pF 20 pF 1.2 pF 100 nF 31 40 10 38 nH length 7.8 mm width 2 mm length 8.8 mm width 1.4 mm length 8 mm width 8 mm length 8 mm int. dia. 3 mm 4330 030 36301 2222 852 47104 2222 629 08223 DIMENSIONS CATALOGUE NO.
1996 Nov 14
7
Philips Semiconductors
Product specification
UHF power transistor
BLV2044
COMPONENT L8 L9 R1 Notes
DESCRIPTION stripline; note 3 2 turns enamelled 1 mm copper wire metal film resistor
VALUE 23 9 nH 10 ; 0.4 W
DIMENSIONS length 6.4 mm width 3 mm length 4 mm int. dia. 3 mm
CATALOGUE NO.
2311 153 51009
1. American Technical Ceramics type 100A or capacitor of the same quality. 2. American Technical Ceramics type 100B or capacitor of the same quality. 3. The striplines are on a double copper-clad printed-circuit board with epoxy fibre-glass dielectric (r = 6.15); thickness 0.64 mm.
1996 Nov 14
8
Philips Semiconductors
Product specification
UHF power transistor
BLV2044
handbook, full pagewidth
30
36.1
40
+Vbias
+VCC
C2
L5 C5
C3 C7
L10 R1
C8
L4 50 input L1 C1 C4 C6 L2 L3 L6
L9 L7 L8 C9 50 output
MGG291
Dimensions in mm. The components are situated on one side of the copper-clad epoxy fibre-glass board, the other side is not etched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.12 Component layout and printed-circuit board for 1.8 to 2 GHz class-AB test circuit.
1996 Nov 14
9
Philips Semiconductors
Product specification
UHF power transistor
BLV2044
MGD246
MGD247
handbook, halfpage
12
handbook, halfpage
15
Zi ()
xi
ZL ()
RL
10
8 ri 5
0 4 -5
XL
0 1700
1800
1900
f (MHz)
2000
-10 1700
1800
1900
f (MHz)
2000
VCE = 26 V; ICQ = 40 mA; PL = 15 W; Tmb = 25 C.
VCE = 26 V; ICQ = 40 mA; PL = 15 W; Tmb = 25 C.
Fig.13 Input impedance as a function of frequency (series components); typical values.
Fig.14 Load impedance as a function of frequency (series components); typical values.
MGD248
handbook, halfpage
12
Gp (dB) 8
handbook, halfpage
4
Zi ZL
MBA451
0 1700
1800
1900
f (MHz)
2000
VCE = 26 V; ICQ = 40 mA; PL = 15 W; Tmb = 25 C.
Fig.15 Power gain as a function of frequency; typical values.
Fig.16 Definition of transistor impedance.
1996 Nov 14
10
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE
BLV2044
19.1 max 0.13 max 2.3 2.0 seating plane 14.22 1 6.5 max 1.7 max
4.8 max
0.25 M
4.5 min
O 3.3 3
6.5 6.2
2 1.7 max
4.5 min
MBB945
Dimensions in mm. Recommended screw: M3. Torque on screws: max. 0.5 Nm.
Fig.17 SOT437A.
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1996 Nov 14
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1996
Internet: http://www.semiconductors.philips.com
SCA52
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127061/1200/02/pp12
Date of release: 1996 Nov 14
Document order number:
9397 750 01116

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